A Technique to Improve the Performance of an NPN HBT on Thin-Film SOI
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چکیده
منابع مشابه
Analog/RF Performance of NPN SiGe HBT on Thin Film SOI Over -55 to +125 degC Temperature Range
The research has been carried out to integrate MOSFETs and bipolar transistors on SOI substrate for high performance mixed signal applications [1]. Jin Cai, et al [2] analyzed npn SiGe HBT on SOI substrate. The characteristics of SiGe HBT on SOI over temperature range of 27 to 330 degC are reported in [3]. The performance of SiGe HBT on bulk is reported in extreme environment (-230 to 120 degC)...
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2013
ISSN: 2168-6734
DOI: 10.1109/jeds.2013.2253597